1. (Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing. (23rd August 2016) Authors: Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 171 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Current Topics in Electronic Devices Based on Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency. (23rd August 2016) Authors: Carlson, Eric P; Kizilyalli, Isik C.; Heidel, Timothy D; Cunningham, Daniel W Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension. (23rd August 2016) Authors: Anderson, Travis J; Koehler, Andrew D.; Feigelson, Boris; Hobart, Karl D; Kub, Francis J Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 93 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates. (23rd August 2016) Authors: Piotrowska, Anna Barbara; Kaminska, Eliana Anetka; Wojtasiak, Wojciech; Gwarek, Wojciech; Kucharski, Robert; Zajac, Marcin; Prystawko, Pawel; Kruszewski, Piotr; Ekielski, Marek; Kaczmarski, Jakub; Kozubal, Maciej; Trajnerowicz, Artur; Taube, Andrzej Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. (Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices. (23rd August 2016) Authors: Fitzgerald, Eugene A; Lee, K.E.; Zhang, Li; Huang, C.C.; Kadir, A.; Bao, Shuyu; Ren, Z.; Wang, C.; Wang, Y.; Lee, Kwang Hong; Liu, Z.H.; Palacios, Tomas; Tan, Chuan Seng; Ng, G.I.; Chua, S.J. Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. (Invited) Physics of GaN High Electron Mobility Transistors. (23rd August 2016) Authors: Shur, Michael Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 69 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. (Invited) Progress in Buried Grid Technology for Improvements in on-Resistance of High Voltage SiC Devices. (23rd August 2016) Authors: Schöner, Adolf; Elahipanah, Hossein; Thierry-Jebali, Nicolas; Reshanov, Sergey A.; Kaplan, Wlodek; Zhang, Andy; Lim, Jang-Kwon; Bakowski, Mietek Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 183 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. (Invited) Reliability Study of RF Power Amplifiers with GaN-on-SiC HEMTs. (23rd August 2016) Authors: Lang, Jenny; Lim, Jang-Kwon; Hellen, Johan; Nilsson, Torbjörn M.J.; Schodt, Bo; Poder, Ralf; Belov, Ilja; Bakowski, Mietek; Leisner, Peter Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 49 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. (Invited) RF Power Performance of Nanocrystalline Diamond Coated InAlN/AlN/GaN HEMTs. (23rd August 2016) Authors: Downey, Brian P.; Meyer, David J.; Ancona, Mario G.; Feygelson, Tatyana I; Pate, Bradford B; Roussos, Jason A.; Tadjer, Marko J.; Anderson, Travis J; Hardy, Matthew T; Nepal, Neeraj; Eddy, Charles R. Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 85 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. (Invited) Schematic Description of the Internal Stress Distribution Responsible for Defect Generation in Larger-Diameter PVT-Grown 4H-SiC Single Crystals. (23rd August 2016) Authors: Fujimoto, Tatsuo; Nakabayashi, Masashi; Ushio, Shohji; Tani, Komomo; Katsuno, Masakazu; Sato, Shinya; Tsuge, Hiroshi Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 155 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗