(Invited) Current Topics in Electronic Devices Based on Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency. (23rd August 2016)

• Record Type: Journal Article
• Authors: Carlson, Eric P; Kizilyalli, Isik C.; Heidel, Timothy D; Cunningham, Daniel W
• Is Part Of: ECS transactions. Volume 75:Number 12(2016)
• Page Start: 3
• Page End: 9
• Publication Date: 2016-08-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07512.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, gallium nitride (GaN), silicon carbide (SiC), and diamond, with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. The progress of the development of high voltage, high current wide-bandgap power switching devices in the ARPA-E SWITCHES program is reviewed. The performance of various rectifiers and transistors, which have been demonstrated, is discussed. Material and processing challenges and reliability concerns for wide-bandgap power devices are also described. A glimpse into the future trends in device development and commercialization is offered.