Journal: Microelectronics and reliability / Issue: Volume 57(2016) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Journal Microelectronics and reliability Issue Volume 57(2016)

1. A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. (February 2016)

Authors:: Ji, Feng; Xu, J.P.; Liu, L.; Tang, W.M.; Lai, P.T.
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 24
Record Type:: Journal Article
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2. An efficient temperature dependent hot carrier injection reliability simulation flow. (February 2016)

Authors:: Kamal, Mehdi; Xie, Qing; Pedram, Massoud; Afzali-Kusha, Ali; Safari, Saeed
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 10
Record Type:: Journal Article
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3. An embedded trace FCCSP substrate without glass cloth. (February 2016)

Authors:: Chao, Shin-Hua; Hung, Chih-Ping; Chen, Mark; Lee, Youru; Huang, Joey; Kao, Golden; Luh, Ding-Bang
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 101
Record Type:: Journal Article
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4. Degradation behavior and mechanism of polymer films for high-ohmic resistor protection in a heat and humid environment. (February 2016)

Authors:: Wang, X.Y.; Zhang, H.; Ma, X.P.; Cheng, Q.; Li, C.G.; Li, M.X.; Chen, T.N.; Zhang, P.; Shao, J.Q.
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 79
Record Type:: Journal Article
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5. Design, evaluation and fault-tolerance analysis of stochastic FIR filters. (February 2016)

Authors:: Wang, Ran; Han, Jie; Cockburn, Bruce F.; Elliott, Duncan G.
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 111
Record Type:: Journal Article
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6. Editorial Board. (February 2016)

Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: IFC
Record Type:: Journal Article
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7. ESD protection for negative charge pump (CP) using CP internal switches. (February 2016)

Authors:: Srivastava, Ankit; Worley, Gene; Quan, Xiaohong; Miao, Guoqing
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 59
Record Type:: Journal Article
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8. Experimental study of multilayer SiCN barrier film in 45/40 nm technological node and beyond. (February 2016)

Authors:: Ming, Zhou; De Yuan, Xiao; Min, Peng Shi; Shan, Hong Zhong; Xie, Shu Yi
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 86
Record Type:: Journal Article
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9. Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. (February 2016)

Authors:: Park, Kyungbae; Lim, Chulseung; Yun, Donghyuk; Baeg, Sanghyeon
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 39
Record Type:: Journal Article
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10. Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation. (February 2016)

Authors:: Huang, Huixiang; Huang, YanYang; Zheng, Jiachun; Wei, Sufen; Tang, Kai; Bi, Dawei; Zhang, Zhengxuan
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 1
Record Type:: Journal Article
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