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You searched for: Journal Solid-state electronics Issue Volume 159(2019)Limit your search
- 621.38152 30
- Semiconducteurs -- Périodiques 30
- Semiconductors -- Periodicals 30
- 28 nm FDSOI -- Characterization -- Cryogenic CMOS -- Cryogenic MOSFET -- Double-gate -- Low temperature -- Mobility -- Modeling -- 4.2 K 1
- A2RAM -- C-V characteristic -- SOI -- Electrical characterization -- Doping profile 1
- Automatic measurement setup -- Conductivity control -- Massive characterization -- Modelling -- Neuromorphic engineering -- RRAM -- Synaptic devices 1
- BIMOS -- Body-contacted -- MOSFET -- FD-SOI 1
- CMOS -- BTI -- HCI -- Parameters -- Extraction -- Method -- RTN -- Defects -- Aging 1
- Dual material gate (DMG) -- Inversion charge -- Quantum effects -- Threshold voltage 1
- Electrostatic discharges -- ESD -- FD-SOI -- GDNMOS -- GDBIMOS -- Gated diode -- MOSFET -- BIMOS 1