1. Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions. Issue 3 (8th December 2021) Authors: Wenzel, Hans; Fricke, Jörg; Maaßdorf, Andre; Ammouri, Nor; Zink, Christof; Martin, Dominik; Knigge, Andrea Journal: Electronics letters Issue: Volume 58:Issue 3(2022) Page Start: 121 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions. Issue 11 (16th April 2021) Authors: Wenzel, Hans; Maaßdorf, Andre; Zink, Christof; Martin, Dominik; Weyers, Markus; Knigge, Andrea Journal: Electronics letters Issue: Volume 57:Issue 11(2021) Page Start: 445 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗