Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions. Issue 11 (16th April 2021)

• Record Type: Journal Article
• Authors: Wenzel, Hans; Maaßdorf, Andre; Zink, Christof; Martin, Dominik; Weyers, Markus; Knigge, Andrea
• Is Part Of: Electronics letters. Volume 57:Issue 11(2021)
• Page Start: 445
• Page End: 447
• Publication Date: 2021-04-16
• Subjects: Electronics -- Periodicals; 621.381
• DOI: 10.1049/ell2.12162
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract: A multi‐active‐region bipolar‐cascade edge‐emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third‐order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm 2 . The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm −1 . The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.