Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions. Issue 3 (8th December 2021)

• Record Type: Journal Article
• Authors: Wenzel, Hans; Fricke, Jörg; Maaßdorf, Andre; Ammouri, Nor; Zink, Christof; Martin, Dominik; Knigge, Andrea
• Is Part Of: Electronics letters. Volume 58:Issue 3(2022)
• Page Start: 121
• Page End: 123
• Publication Date: 2021-12-08
• Subjects: Electronics -- Periodicals; 621.381
• DOI: 10.1049/ell2.12366
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract: We present a multi‐active‐region bipolar‐cascade distributed‐Bragg reflector (DBR) laser emitting around 910 nm. The three active regions and two tunnel junctions are located in a single waveguide core sharing the same third‐order vertical mode. A slope efficiency of 2.25 W/A was measured with a threshold current density of 400 A/cm 2 . Due to the implemented 7th Bragg order surface grating, the laser exhibits a narrow optical spectrum with a width of 0.3 nm and a thermal detuning of 60 pm/K.