1. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation‐Free Planar Ultraviolet Photonic Device Applications. Issue 38 (4th August 2016) Authors: Le, Binh H.; Zhao, Songrui; Liu, Xianhe; Woo, Steffi Y.; Botton, Gianluigi A.; Mi, Zetian Journal: Advanced materials Issue: Volume 28:Issue 38(2016) Page Start: 8446 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy. Issue 11 (20th August 2021) Authors: Yin, Xue; Zhao, Songrui Journal: Physica status solidi Issue: Volume 258:Issue 11(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Extending group‐III nitrides to the infrared: Recent advances in InN (Phys. Status Solidi B 5/2015). Issue 5 (May 2015) Authors: Mi, Zetian; Zhao, Songrui Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Extending group‐III nitrides to the infrared: Recent advances in InN. Issue 5 (30th January 2015) Authors: Mi, Zetian; Zhao, Songrui Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: 1050 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High Internal Quantum Efficiency AlGaN Epilayer Grown by Molecular Beam Epitaxy on Si Substrate. (7th July 2021) Authors: Yin, Xue; Zhao, Songrui Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. III-Nitride nanowire optoelectronics. (November 2015) Authors: Zhao, Songrui; Nguyen, Hieu P.T.; Kibria, Md. G.; Mi, Zetian Journal: Progress in quantum electronics Issue: Volume 44(2015:Nov.) Page Start: 14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Is the Fermi‐level pinned on InN grown surfaces?. Issue 3 (20th February 2014) Authors: Zhao, Songrui; Mi, Zetian Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 412 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate. (15th November 2021) Authors: Zhang, Qihua; Yin, Xue; Martel, Eli; Zhao, Songrui Journal: Materials science in semiconductor processing Issue: Volume 135(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Molecular Beam Epitaxy of AlGaN Epilayers on Si for Vertical Deep Ultraviolet Light-Emitting Diodes. (1st November 2022) Authors: Zhang, Qihua; Parimoo, Heemal; Martel, Eli; Zhao, Songrui Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Nanogenerators based on vertically aligned InN nanowires. Issue 4 (24th December 2015) Authors: Liu, Guocheng; Zhao, Songrui; Henderson, Robert D. E.; Leonenko, Zoya; Abdel-Rahman, Eihab; Mi, Zetian; Ban, Dayan Journal: Nanoscale Issue: Volume 8:Issue 4(2016) Page Start: 2097 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗