Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy. Issue 11 (20th August 2021)

• Record Type: Journal Article
• Authors: Yin, Xue; Zhao, Songrui
• Is Part Of: Physica status solidi. Volume 258:Issue 11(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-08-20
• Subjects: aluminum gallium nitride (AlGaN) -- double-heterostructures -- molecular beam epitaxy -- point defects -- ultraviolet lasers; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.202100201
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Herein, aluminum gallium nitride (AlGaN)/AlN double‐heterostructure (DH) laser at 287 nm with a lasing threshold of 530 kW cm −2 is shown. The laser structure is grown on the AlN‐on‐sapphire template by molecular beam epitaxy. This lasing threshold is drastically reduced compared with the previously reported AlGaN DH lasers at 297 nm with a threshold of around 1 MW cm −2 . The detailed studies indicate that this improvement is mainly attributed to the control of defect formation largely due to the increased growth temperature of the AlGaN active layer. This is consistent with the improved internal quantum efficiency at low excitations. Moreover, the control of Al vacancy related point defects is clearly demonstrated by the absence of defect emission in the visible band. Abstract : Herein, the lasing threshold reduction for aluminum gallium nitride (AlGaN)/AlN double‐heterostructure lasers grown by molecular beam epitaxy on AlN‐on‐sapphire template is reported. The lasing threshold reduction is mainly attributed to the control of point defects.