1. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current. (April 2015) Authors: Li, X.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Liu, Z.S.; Shi, M.; Zhao, D.M.; Liu, W.; Zhu, J.J.; Zhang, S.M.; Yang, H. Journal: Superlattices and microstructures Issue: Volume 80(2015) Page Start: 111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Different annealing temperature suitable for different Mg doped P-GaN. (April 2017) Authors: Liu, S.T.; Yang, J.; Zhao, D.G.; Jiang, D.S.; Liang, F.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Li, X.; Liu, W.; Zhang, L.Q.; Long, H.; Li, M. Journal: Superlattices and microstructures Issue: Volume 104(2017) Page Start: 63 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms. (January 2018) Authors: Yang, J.; Liu, S.T.; Wang, X.W.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Liang, F.; Liu, W.; Zhang, L.Q.; Yang, H.; Wang, W.J.; Li, M. Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 34 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer. (April 2019) Authors: Yang, J.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Liang, F.; Liu, W.; Liu, S.T.; Li, M. Journal: Optics & laser technology Issue: Volume 111(2019) Page Start: 810 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Enhancing the performance of InGaN/GaN multiple quantum well blue laser diodes by suppressing the overflow of holes. (August 2018) Authors: Yang, J.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Liu, W.; Liang, F.; Liu, S.T.; Xing, Y.; Li, M. Journal: Superlattices and microstructures Issue: Volume 120(2018) Page Start: 187 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3. (February 2017) Authors: Yang, J.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Liu, W.; Liang, F.; Li, X.; Liu, S.T.; Zhang, L.Q.; Yang, H. Journal: Superlattices and microstructures Issue: Volume 102(2017) Page Start: 35 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells. (September 2016) Authors: Li, X.; Zhao, D.G.; Yang, J.; Jiang, D.S.; Liu, Z.S.; Chen, P.; Zhu, J.J.; Liu, W.; He, X.G.; Li, X.J.; Liang, F.; Zhang, L.Q.; Liu, J.P.; Yang, H.; Zhang, Y.T.; Du, G.T. Journal: Superlattices and microstructures Issue: Volume 97(2016) Page Start: 186 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses. (July 2016) Authors: Yang, J.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Le, L.C.; He, X.G.; Li, X.J.; Liu, J.P.; Zhang, L.Q.; Yang, H. Journal: Vacuum Issue: Volume 129(2016) Page Start: 99 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer. (January 2018) Authors: Liu, S.T.; Yang, J.; Zhao, D.G.; Jiang, D.S.; Liang, F.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Liu, W.; Xing, Y.; Zhang, L.Q.; Wang, W.J.; Li, M.; Zhang, Y.T.; Du, G.T. Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 690 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Regulating absorption loss and carrier injection efficiency in ultraviolet laser diodes by changing waveguide layer structure. (December 2022) Authors: Yang, J.; Zhao, D.G.; Liu, Z.S.; Liang, F.; Chen, P.; Wang, B.B.; Zhang, Y.H.; Zhang, Z.Z. Journal: Optics & laser technology Issue: Volume 156(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗