Different annealing temperature suitable for different Mg doped P-GaN. (April 2017)

• Record Type: Journal Article
• Authors: Liu, S.T.; Yang, J.; Zhao, D.G.; Jiang, D.S.; Liang, F.; Chen, P.; Zhu, J.J.; Liu, Z.S.; Li, X.; Liu, W.; Zhang, L.Q.; Long, H.; Li, M.
• Is Part Of: Superlattices and microstructures. Volume 104(2017)
• Page Start: 63
• Page End: 68
• Publication Date: 2017-04
• Subjects: P-GaN -- PL -- Hall measurement; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.02.016
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better. Highlights: For first time we found that the annealing process not only influences the Mg-acceptors, but also the donors in P-GaN. We found that MOCVD-grown GaN with different Mg doping concentration needs a different best annealing temperature. The different annealing tendency of P-GaN with different Mg doped comes from the annealing influence to donors.