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3. Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes. (26th May 2016)

6. GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect. (1st August 2022)