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Author/Creator Zhang, Jin-Cheng

1. AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and National Natural Science Foundation of China under Grant Nos 11435010 and 61474086. (July 2015)

Authors:
Li, Xiang-Dong; Zhang, Jin-Cheng; Zou, Yu; Ma, Xue-Zhi; Liu, Chang; Zhang, Wei-Hang; Wen, Hui-Juan; Hao, Yue
Journal:
Chinese physics letters
Issue:
Volume 32:Number 7(2015:Jul.)
Page Start:
1214
Record Type:
Journal Article
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3. Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy*Supported by the National Natural Science Foundation of China under Grant No 61204006, the Fundamental Research Funds for the Central Universities under Grant No 7214570101, and the National Key Science and Technology Special Project under Grant No 2008ZX01002-002. (August 2015)

Authors:
Jiang, Teng; Xu, Sheng-Rui; Zhang, Jin-Cheng; Lin, Zhi-Yu; Jiang, Ren-Yuan; Hao, Yue
Journal:
Chinese physics letters
Issue:
Volume 32:Number 8(2015:Aug.)
Page Start:
865
Record Type:
Journal Article
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5. Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates *Supported by the National Natural Science Foundation of China under Grant No 61204006, and the Fundamental Research Funds for the Central Universities under Grant No K50511250002. (September 2015)

Authors:
Jiang, Ren-Yuan; Xu, Sheng-Rui; Zhang, Jin-Cheng; Jiang, Teng; Jiang, Hai-Qing; Wang, Zhi-Zhe; Fan, Yong-Xiang; Hao, Yue
Journal:
Chinese physics letters
Issue:
Volume 32:Number 9(2015:Sep.)
Page Start:
1332
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗