11. Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method. (3rd July 2020) Authors: Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Kitamoto, Akira; Imanishi, Masayuki; Yoshimura, Masashi; Asai, Naomi; Ohta, Hiroshi; Mishima, Tomoyoshi; Mori, Yusuke Journal: Applied physics express Issue: Volume 13:Number 7(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. First‐principles investigation of the GaN growth process in carbon‐added Na‐flux method. Issue 5 (19th November 2014) Authors: Kawamura, Takahiro; Imabayashi, Hiroki; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Morikawa, Yoshitada Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: 1084 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions. Issue 8 (1st March 2017) Authors: Kawamura, Takahiro; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Morikawa, Yoshitada; Kangawa, Yoshihiro; Kakimoto, Koichi Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy. (27th August 2021) Authors: Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Kitamoto, Akira; Usami, Shigeyoshi; Imanishi, Masayuki; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 60:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor. (7th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Growth of high-strength protein crystals with nanofibers. (9th February 2016) Authors: Matsuoka, Miki; Kakinouchi, Keisuke; Adachi, Hiroaki; Maruyama, Mihoko; Sugiyama, Shigeru; Nakabayashi, Iori; Tsuchikura, Hiroshi; Kuwahara, Atsushi; Sano, Satoshi; Yoshikawa, Hiroshi Y.; Takahashi, Yoshinori; Yoshimura, Masashi; Matsumura, Hiroyoshi; Murakami, Satoshi; Inoue, Tsuyoshi; Mori, Yus... Journal: Applied physics express Issue: Volume 9:Number 3(2016:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Growth of large and high quality CsLiB6O10 crystals from self-flux solutions for high resistance against UV laser-induced degradation. (11th June 2019) Authors: Murai, Ryota; Fukuhara, Taishi; Ando, Go; Tanaka, Yasunori; Takahashi, Yoshinori; Matsumoto, Kazuhisa; Adachi, Hiroaki; Maruyama, Mihoko; Imanishi, Masayuki; Kato, Kosaku; Nakajima, Makoto; Mori, Yusuke; Yoshimura, Masashi Journal: Applied physics express Issue: Volume 12:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Habit control during growth on GaN point seed crystals by Na-flux method. (2nd November 2016) Authors: Honjo, Masatomo; Imanishi, Masayuki; Imabayashi, Hiroki; Nakamura, Kosuke; Murakami, Kosuke; Matsuo, Daisuke; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 56:Number 1(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C. (1st March 2022) Authors: Shimizu, Ayumu; Usami, Shigeyoshi; Kamiyama, Masahiro; Kawanami, Itsuki; Kitamoto, Akira; Imanishi, Masayuki; Maruyama, Mihoko; Yoshimura, Masashi; Hata, Masahiko; Isemura, Masashi; Mori, Yusuke Journal: Applied physics express Issue: Volume 15:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition. (27th August 2020) Authors: Shimizu, Ayumu; Tsuno, Shintaro; Kamiyama, Masahiro; Ishibashi, Keiju; Kitamoto, Akira; Imanishi, Masayuki; Yoshimura, Masashi; Hata, Masahiko; Isemura, Masashi; Mori, Yusuke Journal: Applied physics express Issue: Volume 13:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗