High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C. (1st March 2022)

• Record Type: Journal Article
• Authors: Shimizu, Ayumu; Usami, Shigeyoshi; Kamiyama, Masahiro; Kawanami, Itsuki; Kitamoto, Akira; Imanishi, Masayuki; Maruyama, Mihoko; Yoshimura, Masashi; Hata, Masahiko; Isemura, Masashi; Mori, Yusuke
• Is Part Of: Applied physics express. Volume 15:Number 3(2022)
• Publication Date: 2022-03-01
• Subjects: gallium nitride -- OVPE -- crystal growth -- high temperature -- vapor phase epitaxy; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac4fa8
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Polycrystal formation is an issue to be resolved to grow thick GaN crystals by the oxide vapor phase epitaxy (OVPE) method. Since the high-temperature growth at 1250 °C was effective in suppressing the polycrystal formation in our previous study, we attempt further high-temperature OVPE-GaN crystal growth at 1300 °C. However, the GaN surface decomposition becomes severe at 1300 °C. The pre-growth epitaxy was employed to avoid surface decomposition and enable high-temperature growth. Nearly polycrystal-free growth of GaN crystal was achieved, and we obtained a 478 μ m thick OVPE-GaN layer at 1300 °C with a further high growth rate of about 200 μ m h −1 .