1. An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD. (26th April 2017) Authors: Ji, Shiyang; Kosugi, Ryoji; Kojima, Kazutoshi; Mochizuki, Kazuhiro; Saito, Shingo; Nagata, Akiyo; Matsukawa, Yasuko; Yonezawa, Yoshiyuki; Yoshida, Sadafumi; Okumura, Hajime Journal: Applied physics express Issue: Volume 10:Number 5(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Corrigendum: "Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC" [Jpn. J. Appl. Phys. 59, 051004 (2020)]. (24th July 2020) Authors: Matsuura, Hideharu; Takeshita, Akinobu; Hidaka, Atsuki; Ji, Shiyang; Eto, Kazuma; Mitani, Takeshi; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi; Okumura, Hajime Journal: Japanese journal of applied physics Issue: Volume 59:Number 8(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration. (30th August 2018) Authors: Matsuura, Hideharu; Takeshita, Akinobu; Imamura, Tatsuya; Takano, Kota; Okuda, Kazuya; Hidaka, Atsuki; Ji, Shiyang; Eto, Kazuma; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi; Okumura, Hajime Journal: Applied physics express Issue: Volume 11:Number 10(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N. (17th February 2015) Authors: Ji, Shi-yang; Kojima, Kazutoshi; Ishida, Yuuki; Saito, Shingo; Yamaguchi, Hirotaka; Yoshida, Sadafumi; Tsuchida, Hidekazu; Okumura, Hajime Journal: Japanese journal of applied physics Issue: Volume 54:Number 4(2015:Apr.)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD. (19th November 2015) Authors: Ji, Shiyang; Eto, Kazuma; Yoshida, Sadafumi; Kojima, Kazutoshi; Ishida, Yuuki; Saito, Shingo; Tsuchida, Hidekazu; Okumura, Hajime Journal: Applied physics express Issue: Volume 8:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Investigation of giant step bunching in 4H-SiC homoepitaxial growth: Proposal of cluster effect model. (22nd May 2015) Authors: Ishida, Yuuki; Yoshida, Sadafumi Journal: Japanese journal of applied physics Issue: Volume 54:Number 6(2015:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC. (3rd March 2021) Authors: Matsuura, Hideharu; Kondo, Yuki; Iida, Kosuke; Hidaka, Atsuki; Ji, Shiyang; Eto, Kazuma; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi; Okumura, Hajime Journal: Japanese journal of applied physics Issue: Volume 60:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers. (2nd September 2019) Authors: Matsuura, Hideharu; Takeshita, Akinobu; Imamura, Tatsuya; Takano, Kota; Okuda, Kazuya; Hidaka, Atsuki; Ji, Shiyang; Eto, Kazuma; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi; Okumura, Hajime Journal: Japanese journal of applied physics Issue: Volume 58:Number 9(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗