Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers. (2nd September 2019)

• Record Type: Journal Article
• Authors: Matsuura, Hideharu; Takeshita, Akinobu; Imamura, Tatsuya; Takano, Kota; Okuda, Kazuya; Hidaka, Atsuki; Ji, Shiyang; Eto, Kazuma; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi; Okumura, Hajime
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 9(2019)
• Publication Date: 2019-09-02
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab3c2c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigate the transition of the conduction mechanism from band and nearest-neighbor hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped 4H-SiC epilayers with increasing Al concentration ( C Al ). In a sample with C Al of 1.8 × 10 20 cm −3, the dominant conduction mechanisms at high and low temperatures were band and VRH conduction, respectively, whereas in samples with lower C Al values they were band and NNH conduction, respectively, and in samples with higher C Al values VRH conduction was dominant over the entire range of measurement temperatures examined (20–600 K).