1. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory. (18th October 2012) Authors: Kim, Gun Hwan; Lee, Jong Ho; Ahn, Youngbae; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong Journal: Advanced functional materials Issue: Volume 23:Number 11(2013) Page Start: 1440 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing. (31st October 2016) Authors: Bae, Woorham; Yoon, Kyung Jean; Hwang, Cheol Seong; Jeong, Deog-Kyoon Journal: Nanotechnology Issue: Volume 27:Number 48(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View. (3rd July 2014) Authors: Seok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Hyung; Kwon, Dae Eun; Lim, Hyungkwang; Kim, Gun Hwan; Jeong, Doo Seok; Hwang, Cheol Seong Journal: Advanced functional materials Issue: Volume 24:Number 34(2014) Page Start: 5316 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors. (9th December 2019) Authors: Xu, Nuo; Park, Tae Gyun; Kim, Hae Jin; Shao, Xinglong; Yoon, Kyung Jean; Park, Tae Hyung; Fang, Liang; Kim, Kyung Min; Hwang, Cheol Seong Journal: Advanced intelligent systems Issue: Volume 2:Number 1(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory. Issue 36 (6th September 2016) Authors: Shao, Xing Long; Kim, Kyung Min; Yoon, Kyung Jean; Song, Seul Ji; Yoon, Jung Ho; Kim, Hae Jin; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Young Jae; Kim, Yu Min; Hu, Xi Wen; Zhao, Jin Shi; Hwang, Cheol Seong Journal: Nanoscale Issue: Volume 8:Issue 36(2016) Page Start: 16455 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. All-printed triboelectric nanogenerator. (February 2018) Authors: Seol, Myeong-Lok; Han, Jin-Woo; Moon, Dong-Il; Yoon, Kyung Jean; Hwang, Cheol Seong; Meyyappan, M. Journal: Nano energy Issue: Volume 44(2018) Page Start: 82 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Comprehensive Writing Margin Analysis and its Application to Stacked one Diode‐One Memory Device for High‐Density Crossbar Resistance Switching Random Access Memory. (16th September 2016) Authors: Yoon, Kyung Jean; Bae, Woorham; Jeong, Deog‐Kyoon; Hwang, Cheol Seong Journal: Advanced Electronic Materials Issue: Volume 2:Number 10(2016) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109. (17th May 2017) Authors: Yoon, Kyung Jean; Kim, Gun Hwan; Yoo, Sijung; Bae, Woorham; Yoon, Jung Ho; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Yeong Jae; Kim, Hae Jin; Kim, Yu Min; Hwang, Cheol Seong Journal: Advanced Electronic Materials Issue: Volume 3:Number 7(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Electrically-generated memristor based on inkjet printed silver nanoparticles. Issue 8 (20th June 2019) Authors: Yoon, Kyung Jean; Han, Jin-Woo; Moon, Dong-Il; Seol, Myeong Lok; Meyyappan, M.; Kim, Han Joon; Hwang, Cheol Seong Journal: Nanoscale advances Issue: Volume 1:Issue 8(2019) Page Start: 2990 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory. Issue 25 (5th June 2015) Authors: Shao, Xing Long; Zhou, Li Wei; Yoon, Kyung Jean; Jiang, Hao; Zhao, Jin Shi; Zhang, Kai Liang; Yoo, Sijung; Hwang, Cheol Seong Journal: Nanoscale Issue: Volume 7:Issue 25(2015) Page Start: 11063 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗