1. A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes. (November 2020) Authors: Wang, Zhian; Li, Binhong; Wu, Jianfei; Zhao, Wenxin; Li, Bo; Liu, Hainan; Guan, Chongjie; Feng, Shiwei; Luo, Jiajun; Ye, Tianchun Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A dual-band CMOS LC-VCO with highly linear frequency tuning characteristics. Issue 12 (December 2015) Authors: Luo, Yanbin; Ma, Chengyan; Gan, Yebing; Qian, Min; Ye, Tianchun Journal: Microelectronics journal Issue: Volume 46:Issue 12 Part B (2015) Page Start: 1420 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique. (1st January 2017) Authors: Duan, Ningyuan; Wang, Guilei; Luo, Jun; Mao, Shujuan; Luo, Xue; Xu, Jing; Wang, Wenwu; Liu, Shi; Chen, Dapeng; Li, Junfeng; Zhao, Chao; Ye, Tianchun Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 12(2017) Page Start: P904 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique. (22nd December 2017) Authors: Duan, Ningyuan; Wang, Guilei; Luo, Jun; Mao, Shujuan; Luo, Xue; Xu, Jing; Wang, Wenwu; Liu, Shi; Chen, Dapeng; Li, Junfeng; Zhao, Chao; Ye, Tianchun Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 12(2017) Page Start: P904 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. (July 2016) Authors: Luo, Weichun; Yang, Hong; Wang, Wenwu; Xu, Yefeng; Tang, Bo; Ren, Shangqing; Xu, Hao; Wang, Yanrong; Qi, Luwei; Yan, Jiang; Zhu, Huilong; Zhao, Chao; Chen, Dapeng; Ye, Tianchun Journal: Microelectronics and reliability Issue: Volume 62(2016) Page Start: 70 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process. (1st January 2015) Authors: Ren, Shangqing; , YangHong; Tang, Bo; Xu, Hao; Luo, Weichun; Tang, Zhaoyun; Xu, Yefeng; Xu, Jing; Wang, Dahai; Li, Junfeng; Yan, Jiang; Zhao, Chao; Chen, Dapeng; Ye, Tianchun; Wang, Wenwu Journal: Journal of semiconductors Issue: Volume 36:Number 1(2015:Jan.) Page Start: 014007 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Comprehensive characterization of TSV etching performance with phase‐contrast X‐ray microtomography. (27th May 2020) Authors: Li, Ke; Deng, Biao; Zhang, Haipeng; Yu, Fucheng; Xue, Yanling; Xie, Changqing; Ye, Tianchun; Xiao, Tiqiao Journal: Journal of synchrotron radiation Issue: Volume 27:Part 4(2020) Page Start: 1023 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation. (1st January 2019) Authors: Ma, Xueli; Xiang, Jinjuan; Zhou, Lixing; Wang, Xiaolei; Li, Yongliang; Yang, Hong; Zhang, Jing; Zhao, Chao; Yin, Huaxiang; Wang, Wenwu; Ye, Tianchun Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: N100 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation. (31st May 2019) Authors: Ma, Xueli; Xiang, Jinjuan; Zhou, Lixing; Wang, Xiaolei; Li, Yongliang; Yang, Hong; Zhang, Jing; Zhao, Chao; Yin, Huaxiang; Wang, Wenwu; Ye, Tianchun Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: N100 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs*Project supported by the National 02 IC Projects and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences. (April 2015) Authors: Xu, Miao; Yin, Huaxiang; Zhu, Huilong; Ma, Xiaolong; Xu, Weijia; Zhang, Yongkui; Zhao, Zhiguo; Luo, Jun; Yang, Hong; Li, Chunlong; Meng, Lingkuan; Hong, Peizhen; Xiang, Jinjuan; Gao, Jianfeng; Xu, Qiang; Xiong, Wenjuan; Wang, Dahai; Li, Junfeng; Zhao, Chao; Chen, Dapeng Journal: Journal of semiconductors Issue: Volume 36:Number 4(2015:Apr.) Page Start: 263 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗