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6. 48.2: Invited Paper: High conductivity & transparent aluminum‐based multi‐layer source/drain electrodes for thin film transistors. (28th November 2018)

9. A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors. Issue 12 (21st September 2018)

10. All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process. Issue 28 (7th July 2017)