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2. Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation. Issue 42 (17th October 2019)

4. Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance. (12th September 2012)

5. Interface-engineered reliable HfO2-based RRAM for synaptic simulation. Issue 40 (4th October 2019)

8. Toward van der Waals epitaxy of transferable ferroelectric barium titanate films via a graphene monolayer. Issue 10 (10th February 2020)