Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures. Issue 47 (27th May 2015)
- Record Type:
- Journal Article
- Title:
- Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures. Issue 47 (27th May 2015)
- Main Title:
- Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
- Authors:
- Cao, Duo
Cheng, Xinhong
Xie, Ya-Hong
Zheng, Li
Wang, Zhongjian
Yu, Xinke
Wang, Jia
Shen, Dashen
Yu, Yuehui - Abstract:
- <abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn2j3ng9" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />AlN films are grown on AlGaN/GaN by PEALD. High-temperature annealing promotes complete nitridation of AlN film, and causes AlN to form a semiconductor-like structure.</p> </abstract>
- Is Part Of:
- RSC advances. Volume 5:Issue 47(2015)
- Journal:
- RSC advances
- Issue:
- Volume 5:Issue 47(2015)
- Issue Display:
- Volume 5, Issue 47 (2015)
- Year:
- 2015
- Volume:
- 5
- Issue:
- 47
- Issue Sort Value:
- 2015-0005-0047-0000
- Page Start:
- 37881
- Page End:
- 37886
- Publication Date:
- 2015-05-27
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c5ra04728e ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3694.xml