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Date 2016 Author/Creator Witters, L.

1. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016)

Authors:
Franco, J.; Kaczer, B.; Vais, A.; Alian, A.; Arimura, H.; Putcha, V.; Sioncke, S.; Waldron, N.; Zhou, D.; Nyns, L.; Mitard, J.; Witters, L.; Heyns, M.; Groeseneken, G.; Collaert, N.; Linten, D.; Thean, A.
Journal:
MRS advances
Issue:
Volume 1:Issue 49(2016)
Page Start:
3329
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Processing Technologies for Advanced Ge Devices. (5th December 2016)

Authors:
Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 1(2017)
Page Start:
P14
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

3. Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications. (February 2016)

Authors:
Ritzenthaler, R.; Schram, T.; Witters, L.; Mitard, J.; Spessot, A.; Caillat, C.; Hellings, G.; Eneman, G.; Aoulaiche, M.; Na, H.-J.; Son, Y.; Noh, K.B.; Fazan, P.; Lee, S.-G.; Collaert, N.; Mocuta, A.; Horiguchi, N.; Thean, A.V.-Y.
Journal:
Materials science in semiconductor processing
Issue:
Volume 42:Part 2(2016:Feb.)
Page Start:
255
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗