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Author/Creator Watanabe, Issei

2. Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer. Issue 8 (6th January 2023)

Authors:
Endoh, Akira; Hatori, Koharu; Kishimoto, Naoyuki; Hiraoka, Mizuho; Kemmochi, Yuta; Endoh, Yuki; Osawa, Koki; Hayashi, Takuya; Machida, Ryuto; Watanabe, Issei; Yamashita, Yoshimi; Hara, Shinsuke; Kasamatsu, Akifumi; Fujishiro, Hiroki I.
Other Names:
Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor.
Journal:
Physica status solidi
Issue:
Volume 220:Issue 8(2023)
Page Start:
n/a
Record Type:
Journal Article
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3. Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer. Issue 3 (12th November 2019)

Authors:
Hiraoka, Mizuho; Endoh, Yuki; Osawa, Koki; Kishimoto, Naoyuki; Hayashi, Takuya; Machida, Ryuto; Watanabe, Issei; Yamashita, Yoshimi; Hara, Shinsuke; Gotow, Takahiro; Kasamatsu, Akifumi; Endoh, Akira; Fujishiro, Hiroki I.
Other Names:
Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor.
Journal:
Physica status solidi
Issue:
Volume 217:Issue 3(2020)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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