1. (Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors. (16th August 2017) Authors: Knobloch, Theresia; Rzepa, Gerhard; Illarionov, Yury Yuryevich; Waltl, Michael; Polyushkin, Dmitry; Pospischil, Andreas; Furchi, Marco; Mueller, Thomas; Grasser, Tibor Journal: ECS transactions Issue: Volume 80:Number 1(2017) Page Start: 203 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture. (December 2022) Authors: Wilhelmer, Christoph; Waldhoer, Dominic; Jech, Markus; El-Sayed, Al-Moatasem Bellah; Cvitkovich, Lukas; Waltl, Michael; Grasser, Tibor Journal: Microelectronics and reliability Issue: Volume 139(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors. (24th February 2016) Authors: Illarionov, Yury Yu.; Waltl, Michael; Smith, Anderson D.; Vaziri, Sam; Ostling, Mikael; Lemme, Max C.; Grasser, Tibor Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Energetic mapping of oxide traps in MoS2 field-effect transistors. (8th June 2017) Authors: Illarionov, Yury Yu; Knobloch, Theresia; Waltl, Michael; Rzepa, Gerhard; Pospischil, Andreas; Polyushkin, Dmitry K; Furchi, Marco M; Mueller, Thomas; Grasser, Tibor Journal: 2D materials Issue: Volume 4:Number 2(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors. (November 2022) Authors: Tselios, Konstantinos; Michl, Jakob; Knobloch, Theresia; Enichlmair, Hubert; Ioannidis, Eleftherios G.; Minixhofer, Rainer; Grasser, Tibor; Waltl, Michael Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Impact of negative bias temperature instability on single event transients in scaled logic circuits. (17th January 2021) Authors: Shah, Ambika Prasad; Waltl, Michael Journal: International journal of numerical modelling Issue: Volume 34:Number 3(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impact of single-defects on the variability of CMOS inverter circuits. (November 2021) Authors: Waltl, Michael; Waldhoer, Dominic; Tselios, Konstantinos; Stampfer, Bernhard; Schleich, Christian; Rzepa, Gerhard; Enichlmair, Hubert; Ioannidis, Eleftherios G.; Minixhofer, Rainer; Grasser, Tibor Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?. Issue 48 (10th April 2022) Authors: Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhör, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor Journal: Advanced materials Issue: Volume 34:Issue 48(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Separation of electron and hole trapping components of PBTI in SiON nMOS transistors. (November 2020) Authors: Waltl, Michael; Stampfer, Bernhard; Rzepa, Gerhard; Kaczer, Ben; Grasser, Tibor Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Soft error hardening enhancement analysis of NBTI tolerant Schmitt trigger circuit. (April 2020) Authors: Shah, Ambika Prasad; Rossi, Daniele; Sharma, Vishal; Vishvakarma, Santosh Kumar; Waltl, Michael Journal: Microelectronics and reliability Issue: Volume 107(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗