Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors. (24th February 2016)

• Record Type: Journal Article
• Authors: Illarionov, Yury Yu.; Waltl, Michael; Smith, Anderson D.; Vaziri, Sam; Ostling, Mikael; Lemme, Max C.; Grasser, Tibor
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 4(2016:Apr.)Supplement 4
• Publication Date: 2016-02-24
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.04EP03
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene field-effect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high- k top gate and SiO2 back gate of the same device and show that SiO2 gate is more stable with respect to BTI.