1. An AlGaN/GaN field effect diode with a high turn‐on voltage controllability. Issue 8 (20th April 2017) Authors: Kato, Naoki; Wakejima, Akio; Osada, Yamato; Kamimura, Ryuichiro; Itoh, Kenji; Egawa, Takashi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias‐controllable field plate. Issue 8 (16th June 2017) Authors: Mase, Suguru; Wakejima, Akio; Egawa, Takashi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics. (5th August 2021) Authors: Li, Lei; Obata, Tomohiro; Fukui, Aozora; Takeuchi, Kai; Suga, Tadatomo; Tanaka, Atsushi; Wakejima, Akio Journal: Applied physics express Issue: Volume 14:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate. Issue 15 (2nd May 2021) Authors: Ma, Qiang; Ando, Yuji; Wakejima, Akio Journal: Electronics letters Issue: Volume 57:Issue 15(2021) Page Start: 591 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications. Issue 21 (6th July 2021) Authors: Takahashi, Hidemasa; Ando, Yuji; Tsuchiya, Yoichi; Wakejima, Akio; Hayashi, Hiroaki; Yagyu, Eiji; Kikkawa, Koichi; Sakai, Naoki; Itoh, Kenji; Suda, Jun Journal: Electronics letters Issue: Volume 57:Issue 21(2021) Page Start: 810 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate. (1st September 2022) Authors: Ma, Qiang; Ando, Yuji; Tanaka, Atsushi; Wakejima, Akio Journal: Applied physics express Issue: Volume 15:Number 9(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer. (22nd September 2022) Authors: Baratov, Ali; Kawabata, Shinsaku; Urano, Shun; Nagase, Itsuki; Ishiguro, Masaki; Maeda, Shogo; Igarashi, Takahiro; Nezu, Toi; Yatabe, Zenji; Matys, Maciej; Kachi, Tetsu; Adamowicz, Boguslawa; Wakejima, Akio; Kuzuhara, Masaaki; Yamamoto, Akio; Asubar, Joel T. Journal: Applied physics express Issue: Volume 15:Number 10(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper. Issue 24 (26th August 2021) Authors: Ando, Yuji; Makisako, Ryutaro; Takahashi, Hidemasa; Wakejima, Akio; Suda, Jun Journal: Electronics letters Issue: Volume 57:Issue 24(2021) Page Start: 948 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors. (2nd September 2021) Authors: Ma, Qiang; Urano, Shiyo; Ando, Yuji; Tanaka, Atsushi; Wakejima, Akio Journal: Applied physics express Issue: Volume 14:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors. (12th February 2016) Authors: Narita, Tomotaka; Wakejima, Akio; Egawa, Takashi Journal: Applied physics express Issue: Volume 9:Number 3(2016:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗