An AlGaN/GaN field effect diode with a high turn‐on voltage controllability. Issue 8 (20th April 2017)

• Record Type: Journal Article
• Authors: Kato, Naoki; Wakejima, Akio; Osada, Yamato; Kamimura, Ryuichiro; Itoh, Kenji; Egawa, Takashi
• Is Part Of: Physica status solidi. Volume 214:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-04-20
• Subjects: AlGaN -- diodes -- GaN -- threshold voltage; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600830
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this paper, an AlGaN/GaN Field Effect Diode (FED) with high turn‐on voltage ( V ON ) controllability is proposed. The structural feature of a δ‐doped GaN cap, an AlGaN barrier, and a GaN channel (GaN/AlGaN/GaN), and selective dry‐etching of the GaN cap, ensure the precise control of V ON which can be modulated by AlGaN barrier layer thickness. The V ON as low as 0.3 V is obtained at the remained AlGaN thickness of 4‐nm with an extremely low estimated V ON deviation.