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Author/Creator Volkov, N A

2. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides. (April 2021)

Authors:
Volkov, N A; Svetogorov, V N; Ryaboshtan, Yu L; Andreev, A Yu; Yarotskaya, I V; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Slipchenko, S O; Lyutetskii, A V; Veselov, D A; Pikhtin, N A
Journal:
Quantum electronics
Issue:
Volume 51:Number 4(2021)
Page Start:
283
Record Type:
Journal Article
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4. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm. (October 2021)

Authors:
Svetogorov, V N; Ryaboshtan, Yu L; Volkov, N A; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Bakhvalov, K V; Veselov, D A; Lyutetskii, A V; Strelets, V A; Slipchenko, S O; Pikhtin, N A
Journal:
Quantum electronics
Issue:
Volume 51:Number 10(2021)
Page Start:
909
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

5. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm). (February 2022)

Authors:
Volkov, N A; Telegin, K Yu; Gul'tikov, N V; Sabitov, D R; Andreev, A Yu; Yarotskaya, I V; Padalitsa, A A; Ladugin, M A; Marmalyuk, A A; Shestak, L I; Kozyrev, A A; Panarin, V A
Journal:
Quantum electronics
Issue:
Volume 52:Number 2(2022)
Page Start:
179
Record Type:
Journal Article
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6. InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics. (October 2021)

Authors:
Volkov, N A; Bagaev, T A; Sabitov, D R; Andreev, A Yu; Yarotskaya, I V; Padalitsa, A A; Ladugin, M A; Marmalyuk, A A; Bakhvalov, K V; Veselov, D A; Lyutetskii, A V; Rudova, N A; Strelets, V A; Slipchenko, S O; Pikhtin, N A
Journal:
Quantum electronics
Issue:
Volume 51:Number 10(2021)
Page Start:
905
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

7. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide. (February 2021)

Authors:
Volkov, N A; Andreev, A Yu; Yarotskaya, I V; Ryaboshtan, Yu L; Svetogorov, V N; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Slipchenko, S O; Lyutetskii, A V; Veselov, D A; Pikhtin, N A
Journal:
Quantum electronics
Issue:
Volume 51:Number 2(2021)
Page Start:
133
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗