High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm. (October 2021)

• Record Type: Journal Article
• Authors: Svetogorov, V N; Ryaboshtan, Yu L; Volkov, N A; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Bakhvalov, K V; Veselov, D A; Lyutetskii, A V; Strelets, V A; Slipchenko, S O; Pikhtin, N A
• Is Part Of: Quantum electronics. Volume 51:Number 10(2021)
• Page Start: 909
• Page End: 911
• Publication Date: 2021-10
• Subjects: semiconductor laser -- heterostructure -- AlGaInAs/InP -- ultra-narrow waveguide -- 2-μm spectral region.; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17635
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9 – 2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain of about 2.0% – 2.5%. The operation of a laser with an ultra-narrow waveguide at wavelengths increasing from 1.4 – 1.6 to 2.0 μm is studied. At room temperature, the semiconductor lasers with a stripe contact width of 100 μm demonstrates a cw output optical power of 1.0 W with a wavelength of 1.91 μm at a pump current of 6.5 A and with a wavelength of 1.98 μm at a pump current of 7.2 A.