Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide. (February 2021)

• Record Type: Journal Article
• Authors: Volkov, N A; Andreev, A Yu; Yarotskaya, I V; Ryaboshtan, Yu L; Svetogorov, V N; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Slipchenko, S O; Lyutetskii, A V; Veselov, D A; Pikhtin, N A
• Is Part Of: Quantum electronics. Volume 51:Number 2(2021)
• Page Start: 133
• Page End: 136
• Publication Date: 2021-02
• Subjects: semiconductor laser -- heterostructure -- AlGaInAs/InP -- asymmetric waveguide.; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17480
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/InP lasers based on a strongly asymmetric waveguide with a stripe contact width of 100 μm demonstrated an output optical power of 5 W (pump current 11.5 A) in a continuous-wave regime and 19 W (100 A) in a pulsed regime (100 ns, 1 kHz) at a wavelength of 1450 – 1500 nm at room temperature. The obtained data are compared with the output characteristics of lasers based on a symmetric waveguide.