Search
Search Constraints
You searched for: Author/Creator Variam, Naushad- Variam, Naushad [remove] 3
- 530.41 2
- Solid state physics -- Periodicals 2
- 621.38152 1
- Bulk Si fin field-effect-transistors -- High temperature ion implantation -- Phosphorus -- Diffusion -- Drain-induced-barrier-lowering -- On-state current -- Off-state current 1
- Conference proceedings 1
- MOS metal-oxide-semiconductor -- FETs field-effect-transistors -- SCEs short-channel effects -- Ion on-state current -- HT high temperature -- I/I ion implantation -- RT room temperature -- Ext. extension -- SD source and drain -- Phos. Phosphorus -- Si:P Phosphorus in-situ doped Si -- NMOS n-type MOS -- B Boron -- SiGe:B Boron in-situ doped SiGe -- PMOS p-type MOS -- RTA rapid thermal annealing -- SIMS secondary ion mass spectrometry -- Rs sheet resistance -- SADP self-aligned double patterning -- STI shallow trench isolation -- DIBL drain-induced-barrier-lowering -- Vd drain voltage -- Lg gate length -- Ron on-state resistance -- Vg gate voltage -- Vth_lin threshold voltage in linear region -- Ioff off-state current -- SSRM scanning spreading resistance microscopy -- TEM transmission electron microscope 1
- Periodicals 1
- Semiconducteurs -- Périodiques 1
- Semiconductors -- Periodicals 1
- Solid state physics 1