1. (Invited) Highly Reliable Metal Oxide Thin Film Transistors for Flexible Devices. (8th September 2020) Authors: Uraoka, Yukiharu; Corsino, Dianne; Bermundo, Juan Paolo; Fujii, Mami N.; Uenuma, Mutsunori Journal: ECS transactions Issue: Volume 98:Number 7(2020) Page Start: 29 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display. (26th August 2021) Authors: Uraoka, Yukiharu; Takahashi, Takanori; Fujii, Mami; Bermundo, J.P.; Miyanaga, Ryoko; Uenuma, Mutsunori Journal: Digest of technical papers Issue: Volume 52(2021)Supplement 2 Page Start: 395 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors. Issue 1 (25th September 2020) Authors: Uraoka, Yukiharu; Takahashi, Takanori; Kise, Kahori; Bermundo, Juan Paolo; Fujii, Mami N.; Uenuma, Mutsunori; Ishikawa, Yasuaki Journal: Digest of technical papers Issue: Volume 51:Issue 1(2020) Page Start: 71 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Alterations in ambipolar characteristic of graphene due to adsorption of Escherichia coli bacteria. (22nd February 2018) Authors: Mulyana, Yana; Uenuma, Mutsunori; Okamoto, Naofumi; Ishikawa, Yasuaki; Yamashita, Ichiro; Uraoka, Yukiharu Journal: Journal of physics Issue: Volume 51:Number 11(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography. (1st August 2022) Authors: Uenuma, Mutsunori; Kuwaharada, Shingo; Tomita, Hiroto; Tanaka, Masaki; Sun, Zexu; Hashimoto, Yusuke; Fujii, Mami N.; Matsushita, Tomohiro; Uraoka, Yukiharu Journal: Applied physics express Issue: Volume 15:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. (1st January 2019) Authors: Lin, Tengda; Uenuma, Mutsunori; Fururkawa, Masaaki; Bermundo, Juan Paolo Soria; Ishikawan, Yasuaki; Uraoka, Yukiharu Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P388 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. (2nd July 2019) Authors: Lin, Tengda; Uenuma, Mutsunori; Fururkawa, Masaaki; Bermundo, Juan Paolo Soria; Ishikawan, Yasuaki; Uraoka, Yukiharu Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P388 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure. (1st June 2022) Authors: Shibata, Takuya; Uenuma, Mutsunori; Yamada, Takahiro; Yoshitsugu, Koji; Higashi, Masato; Nishimura, Kunihiko; Uraoka, Yukiharu Journal: Japanese journal of applied physics Issue: Volume 61:Number 6(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate. (14th February 2017) Authors: Ban, Takahiko; Migita, Shinji; Uenuma, Mutsunori; Okamoto, Naofumi; Ishikawa, Yasuaki; Uraoka, Yukiharu; Yamashita, Ichiro; Yamamoto, Shin-ichi Journal: Japanese journal of applied physics Issue: Volume 56:Number 3(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO2/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing. Issue 2 (27th December 2019) Authors: Furukawa, Masaaki; Uenuma, Mutsunori; Ishikawa, Yasuaki; Uraoka, Yukiharu Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 2(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗