1. Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures. Issue 2 (17th July 2021) Authors: Khalilian, Maryam; Persson, Axel; Lindgren, David; Rosén, Martin; Lenrick, Filip; Colvin, Jovana; Ohlsson, B. Jonas; Timm, Rainer; Wallenberg, Reine; Samuelson, Lars; Gustafsson, Anders Journal: Nano select Issue: Volume 3:Issue 2(2022) Page Start: 471 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. Issue 13 (23rd March 2022) Authors: Dzhigaev, Dmitry; Svensson, Johannes; Krishnaraja, Abinaya; Zhu, Zhongyunshen; Ren, Zhe; Liu, Yi; Kalbfleisch, Sebastian; Björling, Alexander; Lenrick, Filip; Balogh, Zoltan Imre; Hammarberg, Susanna; Wallentin, Jesper; Timm, Rainer; Wernersson, Lars-Erik; Mikkelsen, Anders Journal: Nanoscale Issue: Volume 14:Issue 13(2022) Page Start: 5247 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications. Issue 30 (24th June 2020) Authors: Khalilian, Maryam; Bi, Zhaoxia; Johansson, Jonas; Lenrick, Filip; Hultin, Olof; Colvin, Jovana; Timm, Rainer; Wallenberg, Reine; Ohlsson, Jonas; Pistol, Mats‐Erik; Gustafsson, Anders; Samuelson, Lars Journal: Small Issue: Volume 16:Issue 30(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Impact of Electrical Current on Single GaAs Nanowire Structure. Issue 8 (29th May 2021) Authors: Bahrami, Danial; AlHassan, Ali; Davtyan, Arman; Zhe, Ren; Anjum, Taseer; Herranz, Jesús; Geelhaar, Lutz; Novikov, Dmitri V.; Timm, Rainer; Pietsch, Ullrich Journal: Physica status solidi Issue: Volume 258:Issue 8(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing (Adv. Mater. Interfaces 27/2022). Issue 27 (23rd September 2022) Authors: Athle, Robin; Blom, Theodor; Irish, Austin; Persson, Anton E. O.; Wernersson, Lars‐Erik; Timm, Rainer; Borg, Mattias Journal: Advanced materials interfaces Issue: Volume 9:Issue 27(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing (Adv. Mater. Interfaces 27/2022). Issue 27 (23rd September 2022) Authors: Athle, Robin; Blom, Theodor; Irish, Austin; Persson, Anton E. O.; Wernersson, Lars‐Erik; Timm, Rainer; Borg, Mattias Journal: Advanced materials interfaces Issue: Volume 9:Issue 27(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing. Issue 27 (23rd August 2022) Authors: Athle, Robin; Blom, Theodor; Irish, Austin; Persson, Anton E. O.; Wernersson, Lars‐Erik; Timm, Rainer; Borg, Mattias Journal: Advanced materials interfaces Issue: Volume 9:Issue 27(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing. Issue 27 (23rd August 2022) Authors: Athle, Robin; Blom, Theodor; Irish, Austin; Persson, Anton E. O.; Wernersson, Lars‐Erik; Timm, Rainer; Borg, Mattias Journal: Advanced materials interfaces Issue: Volume 9:Issue 27(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Low temperature atomic hydrogen annealing of InGaAs MOSFETs. (15th March 2023) Authors: Olausson, Patrik; Yadav, Rohit; Timm, Rainer; Lind, Erik Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence. (1st December 2022) Authors: Irish, Austin; Zou, Xianshao; Barrigon, Enrique; D'Acunto, Giulio; Timm, Rainer; T Borgström, Magnus; Yartsev, Arkady Journal: Nano express Issue: Volume 3:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗