Author/Creator: Tan, Shuxin - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Tan, Shuxin

1. 12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Issue 18 (1st August 2014)

Authors:: Liu, Shuang; Yu, Guohao; Fu, Kai; Tan, Shuxin; Zhang, Zhili; Zeng, Chunhong; Hou, Keyu; Huang, Wei; Cai, Yong; Zhang, Baoshun; Yuan, Jinshe
Journal:: Electronics letters
Issue:: Volume 50:Issue 18(2014)
Page Start:: 1322
Record Type:: Journal Article
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2. 16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si3N4 as gate insulator. Issue 15 (8th July 2015)

Authors:: Zhang, Zhili; Yu, Guohao; Zhang, Xiaodong; Tan, Shuxin; Wu, Dongdong; Fu, Kai; Huang, Wei; Cai, Yong; Zhang, Baoshun
Journal:: Electronics letters
Issue:: Volume 51:Issue 15(2015)
Page Start:: 1201
Record Type:: Journal Article
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3. 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Issue 3 (1st January 2013)

Authors:: Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun
Journal:: Electronics letters
Issue:: Volume 49:Issue 3(2013)
Page Start:: 221
Record Type:: Journal Article
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4. A longer biodegradation process enhances the cadmium adsorption of the biochar derived from a manure mix. (June 2023)

Authors:: Jiang, Yi; Xing, Yonghui; Liu, Song; Tan, Shuxin; Huang, Qiaoyun; Luo, Xuesong; Chen, Wenli
Journal:: Biomass and bioenergy
Issue:: Volume 173(2023)
Page Start:
Record Type:: Journal Article
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5. Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure. (22nd June 2021)

Authors:: Ge, Mei; Li, Yi; Zhu, Youhua; Chen, Dunjun; Wang, Zhiliang; Tan, Shuxin
Journal:: Journal of physics
Issue:: Volume 54:Number 35(2021)
Page Start:
Record Type:: Journal Article
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6. III-nitride piezotronic/piezo-phototronic materials and devices. (18th March 2019)

Authors:: Sha, Wei; Zhang, Jicai; Tan, Shuxin; Luo, Xiangdong; Hu, Weiguo
Journal:: Journal of physics
Issue:: Volume 52:Number 21(2019)
Page Start:
Record Type:: Journal Article
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7. Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors. (April 2019)

Authors:: Tan, Shuxin; Egawa, Takashi
Journal:: Journal of semiconductors
Issue:: Volume 40:Number 4(2019:Apr.)
Page Start:
Record Type:: Journal Article
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8. Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga2O3 back barrier. (2nd November 2021)

Authors:: Ge, Mei; Li, Yi; Zhu, Youhua; Chen, Dunjun; Wang, Zhiliang; Tan, Shuxin
Journal:: Journal of physics
Issue:: Volume 55:Number 6(2022)
Page Start:
Record Type:: Journal Article
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