1. 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers. (17th May 2018) Authors: Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 5(2018) Page Start: Q92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers. (1st January 2018) Authors: Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 5(2018) Page Start: Q92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74. (6th April 2020) Authors: Fares, Chaker; Xian, Minghan; Smith, David J.; McCartney, M. R.; Kneiß, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko; Ren, Fan; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (1st January 2019) Authors: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (20th June 2019) Authors: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65. (1st January 2019) Authors: Fares, Chaker; Islam, Zahabul; Haque, Aman; Kneiß, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko; Ren, Fan; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 12(2019) Page Start: P751 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65. (21st November 2019) Authors: Fares, Chaker; Islam, Zahabul; Haque, Aman; Kneiß, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko; Ren, Fan; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 12(2019) Page Start: P751 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers. (3rd June 2021) Authors: Xia, Xinyi; Xian, Minghan; Fares, Chaker; Ren, Fan; Kim, Junghun; Kim, Jihyun; Tadjer, Marko; Pearton, Stephen J. Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 6(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers. (8th June 2020) Authors: Islam, Zahabul; Haque, Aman; Glavin, Nicholas; Xian, Minghan; Ren, Fan; Polyakov, Alexander Y.; Kochkova, Anastasia; Tadjer, Marko; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 5(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3 Rectifiers. (19th March 2019) Authors: Yang, Jiancheng; Fares, Chaker; Elhassani, Randy; Xian, Minghan; Ren, Fan; Pearton, S. J.; Tadjer, Marko; Kuramata, Akito Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3159 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗