2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers. (17th May 2018)

• Record Type: Journal Article
• Authors: Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 5(2018)
• Page Start: Q92
• Page End: Q96
• Publication Date: 2018-05-17
• Subjects: Gallium Oxide -- Rectifier; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0241805jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We report field-plated Schottky rectifiers of various dimensions (circular geometry with diameter 50–200 μm and square diodes with areas 4 × 10 −3 –10 −2 cm 2 ) fabricated on thick (20μm), lightly doped (n = 2.10 × 10 15 cm −3 ) β-Ga2 O3 epitaxial layers grown by Hydride Vapor Phase Epitaxy on conducting (n = 3.6 × 10 18 cm −3 ) substrates grown by Edge-Defined, Film-Fed growth. The maximum reverse breakdown voltage (VB ) was 2300V for a 150 μm diameter device (area = 1.77 × 10 −4 cm −2 ), corresponding to a breakdown field of 1.15 MV.cm −1 . The reverse current was only 15.6 μA at this voltage. This breakdown voltage is highest reported for Ga2 O3 rectifiers. The on-state resistance (RON ) for these devices was 0.25 Ω.cm 2, leading to a figure of merit (VB 2 /RON ) of 21.2 MW.cm −2 . The Schottky barrier height of the Ni was 1.03 eV, with an ideality factor of 1.1 and a Richardson's constant of 43.35 A.cm −2 .K −2 obtained from the temperature dependence of the forward current density. The breakdown voltages for the different size devices ranged from 1400–2300V, with a general, but not linear trend of decreasing breakdown voltage for larger area rectifiers. The reverse recovery time was ∼22 ns for switching from +2 V to −2 V.