1. A high-speed MIM resistive memory cell with an inherent vanadium selector. (December 2020) Authors: Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Eshraghian, Jason K.; Wang, Qiwen; Lin, Qi; Tan, Yung-Fang; Tai, Mao-Chou; Hung, Wei-Chun; Huang, Hui-Chun; Lu, Wei D.; Sze, Simon M. Journal: Applied materials today Issue: Volume 21(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices. Issue 42 (29th September 2020) Authors: Lin, Chih‐Yang; Chen, Jia; Chen, Po‐Hsun; Chang, Ting‐Chang; Wu, Yuting; Eshraghian, Jason K.; Moon, John; Yoo, Sangmin; Wang, Yu‐Hsun; Chen, Wen‐Chung; Wang, Zhi‐Yang; Huang, Hui‐Chun; Li, Yi; Miao, Xiangshui; Lu, Wei D.; Sze, Simon M. Journal: Small Issue: Volume 16:Issue 42(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Annealing effects on resistive switching of IGZO-based CBRAM devices. (October 2020) Authors: Gan, Kai-Jhih; Liu, Po-Tsun; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M. Journal: Vacuum Issue: Volume 180(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode. Issue 25 (21st June 2017) Authors: Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. Journal: Nanoscale Issue: Volume 9:Issue 25(2017) Page Start: 8586 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory. (August 2019) Authors: Gan, Kai-Jhih; Liu, Po-Tsun; Lin, Sheng-Jie; Ruan, Dun-Bao; Chien, Ta-Chun; Chiu, Yu-Chuan; Sze, Simon M. Journal: Vacuum Issue: Volume 166(2019) Page Start: 226 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory. (2nd September 2021) Authors: Lin, Shih-Kai; Chang, Ting-Chang; Lien, Chen-Hsin; Wu, Cheng-Hsien; Xu, You-Lin; Yang, Chih-Cheng; Huang, Wei-Chen; Wu, Pei-Yu; Zhang, Yong-Ci; Chou, Sheng-Yao; Huang, Hui-Chun; Wang, Kao-Yuan; Sze, Simon M. Journal: Applied physics express Issue: Volume 14:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes. (10th February 2016) Authors: Pan, Chih-Hung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Liang, Shu-Ping; Lin, Chih-Yang; Chen, Min-Chen; Chen, Po-Hsun; Syu, Yong-En; Huang, Hui-Chun; Sze, Simon M. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 5(2016) Page Start: Q115 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes. (1st January 2016) Authors: Pan, Chih-Hung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Liang, Shu-Ping; Lin, Chih-Yang; Chen, Min-Chen; Chen, Po-Hsun; Syu, Yong-En; Huang, Hui-Chun; Sze, Simon M. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 5(2016) Page Start: Q115 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications. (1st January 2019) Authors: Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P319 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications. (7th June 2019) Authors: Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P319 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗