1. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier. (December 2020) Authors: Svetogorov, V.N.; Ryaboshtan, Yu.L.; Ladugin, M.A.; Padalitsa, A.A.; Volkov, N.A.; Marmalyuk, A.A.; Slipchenko, S.O.; Lyutetskii, A.V.; Veselov, D.A.; Pikhtin, N.A. Journal: Quantum electronics Issue: Volume 50:Number 12(2020) Page Start: 1123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of light – current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model. (1st April 2022) Authors: Slipchenko, S.O.; Golovin, V.S.; Soboleva, O.S.; Lamkin, I.A.; Pikhtin, N.A. Journal: Quantum electronics Issue: Volume 52:Number 4(2022) Page Start: 343 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides. (April 2021) Authors: Volkov, N.A.; Svetogorov, V.N.; Ryaboshtan, Yu.L.; Andreev, A.Yu.; Yarotskaya, I.V.; Ladugin, M.A.; Padalitsa, A.A.; Marmalyuk, A.A.; Slipchenko, S.O.; Lyutetskii, A.V.; Veselov, D.A.; Pikhtin, N.A. Journal: Quantum electronics Issue: Volume 51:Number 4(2021) Page Start: 283 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm. (November 2020) Authors: Dudelev, V.V.; Mikhailov, D.A.; Babichev, A.V.; Savchenko, G.M.; Losev, S.N.; Kognovitskaya, E.A.; Lyutetskii, A.V.; Slipchenko, S.O.; Pikhtin, N.A.; Gladyshev, A.G.; Denisov, D.V.; Novikov, I.I.; Karachinsky, L.Ya.; Kuchinskii, V.I.; Egorov, A.Yu.; Sokolovskii, G.S. Journal: Quantum electronics Issue: Volume 50:Number 11(2020) Page Start: 989 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers. (July 2015) Authors: Veselov, D.A.; Pikhtin, N.A.; Lyutetskiy, A.V.; Nikolaev, D.N.; Slipchenko, S.O.; Sokolova, Z.N.; Shamakhov, V.V.; Shashkin, I.S.; Kapitonov, V.A.; Tarasov, I.S. Journal: Quantum electronics Issue: Volume 45:Number 7(2015) Page Start: 597 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm. (March 2018) Authors: Marmalyuk, A.A.; Ryaboshtan, Yu.L.; Gorlachuk, P.V.; Ladugin, M.A.; Padalitsa, A.A.; Slipchenko, S.O.; Lyutetskiy, A.V.; Veselov, D.A.; Pikhtin, N.A. Journal: Quantum electronics Issue: Volume 48:Number 3(2018) Page Start: 197 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures. (February 2021) Authors: Bobretsova, Yu.K.; Veselov, D.A.; Podoskin, A.A.; Voronkova, N.V.; Slipchenko, S.O.; Ladugin, M.A.; Bagaev, T.A.; Marmalyuk, A.A.; Pikhtin, N.A. Journal: Quantum electronics Issue: Volume 51:Number 2(2021) Page Start: 124 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High-coupling distributed feedback lasers for the 1.55 μm spectral region. (September 2019) Authors: Dudelev, V.V.; Mikhailov, D.A.; Chistyakov, D.V.; Kognovitskaya, E.A.; Lyutetskiy, A.V.; Slipchenko, S.O.; Pikhtin, N.A.; Gladyshev, A.G.; Denisov, D.V.; Voropaev, K.O.; Ionov, A.S.; Babichev, A.V.; Novikov, I.I.; Karachinskii, L.Ya.; Kuchinskii, V.I.; Egorov, A.Yu; Sokolovskii, G.S. Journal: Quantum electronics Issue: Volume 49:Number 9(2019) Page Start: 801 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm. (October 2021) Authors: Svetogorov, V.N.; Ryaboshtan, Yu.L.; Volkov, N.A.; Ladugin, M.A.; Padalitsa, A.A.; Marmalyuk, A.A.; Bakhvalov, K.V.; Veselov, D.A.; Lyutetskii, A.V.; Strelets, V.A.; Slipchenko, S.O.; Pikhtin, N.A. Journal: Quantum electronics Issue: Volume 51:Number 10(2021) Page Start: 909 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm. (October 2021) Authors: Bagaev, T.A.; Gul'tikov, N.V.; Ladugin, M.A.; Marmalyuk, A.A.; Kurnyavko, Yu.V.; Krichevskii, V.V.; Morozyuk, A.A.; Konyaev, V.P.; Simakov, V.A.; Slipchenko, S.O.; Podoskin, A.A.; Pikhtin, N.A.; Kazakova, A.E.; Romanovich, D.N.; Kryuchkov, V.A. Journal: Quantum electronics Issue: Volume 51:Number 10(2021) Page Start: 912 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗