Analysis of light – current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model. (1st April 2022)

• Record Type: Journal Article
• Authors: Slipchenko, S.O.; Golovin, V.S.; Soboleva, O.S.; Lamkin, I.A.; Pikhtin, N.A.
• Is Part Of: Quantum electronics. Volume 52:Number 4(2022)
• Page Start: 343
• Page End: 350
• Publication Date: 2022-04-01
• Subjects: model of a semiconductor laser -- rate equations -- carrier transport -- longitudinal hole burning -- laser diode -- high-power semiconductor lasers -- drift-diffusion transport; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL18015
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: This paper presents a 2D model of a high-power semiconductor laser, which takes into account carrier transport across the layers of its heterostructure and longitudinal spatial hole burning (LSHB), an effect related to the nonuniform gain distribution along the cavity axis. We show that the use of the 2D model which takes into account carrier transport across the layers of the heterostructure allows an appreciable contribution of LSHB to saturation of light – current characteristics to be demonstrated. The LSHB effect, causing a decrease in the output optical power of semiconductor lasers, is shown to be stronger at high drive currents and low output mirror reflectivities. In the case of high drive currents, the LSHB-induced drop in power is related to the faster growth of internal optical and recombination losses because of the nonuniform current density distribution along the cavity axis, such that the highest current density can be almost twice the lowest one. LSHB is shown to increase the power stored in a Fabry – Perot cavity, which is an additional mechanism reducing the output optical power.