1. A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications. (1st January 2016) Authors: Feng, Hao; Yang, Wentao; Sin, Johnny K. O. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 2(2016) Page Start: Q61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications. (5th December 2015) Authors: Feng, Hao; Yang, Wentao; Sin, Johnny K. O. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 2(2016) Page Start: Q61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor. (1st January 2018) Authors: Wu, Rongxiang; Liao, Niteng; Sin, Johnny K. O.; Bardet, Benjamin; Billoué, Jérôme; Gautier, Gaël Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 6(2018) Page Start: Q112 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor. (9th June 2018) Authors: Wu, Rongxiang; Liao, Niteng; Sin, Johnny K. O.; Bardet, Benjamin; Billoué, Jérôme; Gautier, Gaël Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 6(2018) Page Start: Q112 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗