A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor. (1st January 2018)

• Record Type: Journal Article
• Authors: Wu, Rongxiang; Liao, Niteng; Sin, Johnny K. O.; Bardet, Benjamin; Billoué, Jérôme; Gautier, Gaël
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 6(2018)
• Page Start: Q112
• Page End: Q115
• Publication Date: 2018-01-01
• Subjects: inductor -- porous silicon -- quality factor; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0141806jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : A Backside Silicon-Embedded Inductor (BSEI) surrounded by porous silicon (PS) is reported for quality factor (Q) improvement. Successful formation of a conformal PS layer surrounding deep trenches (where the inductor coil is accommodated) is demonstrated. Experimental results show that although the DC resistance of the BSEI surrounded by PS is 73% higher than the conventional BSEI due to the non-optimized process, a 24% improvement in the peak Q and an 86% increase in the peak Q frequency can be achieved.