A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications. (5th December 2015)

• Record Type: Journal Article
• Authors: Feng, Hao; Yang, Wentao; Sin, Johnny K. O.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 2(2016)
• Page Start: Q61
• Page End: Q67
• Publication Date: 2015-12-05
• Subjects: hard switching -- insulated gate bipolar transistor -- metal plug -- RC IGBT -- Reverse conducting -- reverse recovery loss -- Schottky -- trench contact; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0291602jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper, a new 1200 V-class reverse-conducting insulated gate bipolar transistor (RC-IGBT) for hard-switching applications is proposed. The proposed structure features deep metal plugs at the emitter-side, and Schottky junctions are formed between the metal plugs and the p-body regions. This design reduces the anode injection efficiency of the built-in diode. Simulation results show that the proposed structure can achieve a significant reduction in the diode-mode reverse-recovery loss, E rr, (−70% at R.T. and −57% at 150°C) without degrading the IGBT-mode performance compared with conventional RC-IGBT. Furthermore, it is also found that the proposed structure can achieve comparable diode-mode performance in terms of E rr and V f (diode-mode forward voltage) compared with those of the state-of-the-art discrete free-wheeling diodes for hard-switching applications.