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Author/Creator Shimura, Yosuke

3. Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1−xSnx epitaxial layer. (29th March 2016)

Authors:
Jeon, Jihee; Asano, Takanori; Shimura, Yosuke; Takeuchi, Wakana; Kurosawa, Masashi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki
Journal:
Japanese journal of applied physics
Issue:
Volume 55:Number 4(2016:Apr.)Supplement 4
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Record Type:
Journal Article
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8. Formation and characterization of Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny double heterostructures with strain-controlled Ge1−x−ySixSny layers. (1st November 2017)

Authors:
Fukuda, Masahiro; Yamaha, Takashi; Asano, Takanori; Fujinami, Syunsuke; Shimura, Yosuke; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki
Journal:
Materials science in semiconductor processing
Issue:
Volume 70(2017)
Page Start:
156
Record Type:
Journal Article
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10. Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers. (18th April 2019)

Authors:
Dhayalan, Sathish Kumar; Nuytten, Thomas; Pourtois, Geoffrey; Simoen, Eddy; Pezzoli, Fabio; Cinquanta, Eugenio; Bonera, Emiliano; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Vandervorst, Wilfried
Journal:
ECS journal of solid state science and technology
Issue:
Volume 8:Number 4(2019)
Page Start:
P209
Record Type:
Journal Article
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