Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1−xSnx epitaxial layer. (29th March 2016)

• Record Type: Journal Article
• Authors: Jeon, Jihee; Asano, Takanori; Shimura, Yosuke; Takeuchi, Wakana; Kurosawa, Masashi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 4(2016:Apr.)Supplement 4
• Publication Date: 2016-03-29
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.04EB13
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We examined the molecular beam epitaxy of Ge1− x Sn x with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1− x Sn x epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 10 20 cm −3 remarkably improves the crystallinity, and surface uniformity of the Ge1− x Sn x epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1− x Sn x growth with in situ Sb doping realizes a very high electron concentration of 10 20 cm −3, which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation.