1. (Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications. (3rd July 2019) Authors: Nakatsuka, Osamu; Fukuda, Masahiro; Sakashita, Mitsuo; Kurosawa, Masashi; Shibayama, Shigehisa; Zaima, Shigeaki Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 41 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design. (8th September 2020) Authors: Nakatsuka, Osamu; Shibayama, Shigehisa; Kurosawa, Masashi; Sakashita, Mitsuo Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 149 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Crystalline and optoelectronic properties of Ge1−xSnx/high-Si-content-SiyGe1−x−ySnx double-quantum wells grown with low-temperature molecular beam epitaxy. (1st January 2023) Authors: Zhang, Shiyu; Shibayama, Shigehisa; Nakatsuka, Osamu Journal: Semiconductor science and technology Issue: Volume 38:Number 1(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Density functional study for crystalline structures and electronic properties of Si1−xSnx binary alloys. (14th July 2016) Authors: Nagae, Yuki; Kurosawa, Masashi; Shibayama, Shigehisa; Araidai, Masaaki; Sakashita, Mitsuo; Nakatsuka, Osamu; Shiraishi, Kenji; Zaima, Shigeaki Journal: Japanese journal of applied physics Issue: Volume 55:Number 8(2016:Aug.)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment. (22nd February 2019) Authors: Doi, Takuma; Takeuchi, Wakana; Shibayama, Shigehisa; Sakashita, Mitsuo; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Erratum: "Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment" [Jpn. J. Appl. Phys. 58 SBBD05 (2019)]. (27th March 2019) Authors: Doi, Takuma; Takeuchi, Wakana; Shibayama, Shigehisa; Sakashita, Mitsuo; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing. (7th April 2020) Authors: Shibayama, Shigehisa; Nagano, Jotaro; Sakashita, Mitsuo; Nakatsuka, Osamu Journal: Japanese journal of applied physics Issue: Volume 59:Number SM(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing. (7th April 2020) Authors: Shibayama, Shigehisa; Nagano, Jotaro; Sakashita, Mitsuo; Nakatsuka, Osamu Journal: Japanese journal of applied physics Issue: Volume 59:Number SM(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Growth of ultrahigh-Sn-content Ge1−xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact. (29th March 2016) Authors: Suzuki, Akihiro; Nakatsuka, Osamu; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Kurosawa, Masashi; Zaima, Shigeaki Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing. (July 2023) Authors: Okada, Kazuya; Shibayama, Shigehisa; Sakashita, Mitsuo; Nakatsuka, Osamu; Kurosawa, Masashi Journal: Applied geography Issue: Volume 161(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗