11. Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance. (August 2016) Authors: Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A. Journal: Superlattices and microstructures Issue: Volume 96(2016) Page Start: 179 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance. (August 2016) Authors: Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A. Journal: Superlattices and microstructures Issue: Volume 96(2016) Page Start: 179 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Effects of a high-dose 24-h infusion of tranexamic acid on death and thromboembolic events in patients with acute gastrointestinal bleeding (HALT-IT): an international randomised, double-blind, placebo-controlled trial. Issue 10241 (20th June 2020) Authors: Roberts, Ian; Shakur-Still, Haleema; Afolabi, Adefemi; Akere, Adegboyega; Arribas, Monica; Brenner, Amy; Chaudhri, Rizwana; Gilmore, Ian; Halligan, Kenneth; Hussain, Irshad; Jairath, Vipul; Javaid, Kiran; Kayani, Aasia; Lisman, Ton; Mansukhani, Raoul; Mutti, Muttiullah; Arif Nadeem, Muhammad; Pol... Journal: Lancet Issue: Volume 395:Issue 10241(2020) Page Start: 1927 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering. (1st January 2018) Authors: Salem, Nada; Ossaimee, Mahmoud; Shaker, Ahmed; Abouelatta, Mohamed Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: M23 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering. (7th February 2018) Authors: Salem, Nada; Ossaimee, Mahmoud; Shaker, Ahmed; Abouelatta, Mohamed Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: M23 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application. (June 2020) Authors: Nabil, Amira; Bernardo, Jose A.; Ma, Yue; Abouelatta, Mohamed; Shaker, Ahmed; Bouchet, Latifa Fakri; Ragai, Hani; Gontrand, Christian Journal: Microelectronics journal Issue: Volume 100(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Full electrothermal physically-based modeling of the power diode using PSPICE. (February 2016) Authors: Shaker, Ahmed; Abouelatta, Mohamed; El-Banna, Mohammed; Ossaimee, Mahmoud; Zekry, Abdelhalim Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 70 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Full electrothermal physically-based modeling of the power diode using PSPICE. (February 2016) Authors: Shaker, Ahmed; Abouelatta, Mohamed; El-Banna, Mohammed; Ossaimee, Mahmoud; Zekry, Abdelhalim Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 70 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Impact of high-doped pockets on the performance of tunneling CNTFET. (September 2020) Authors: Salah, Ahmed; Ossaimee, Mahmoud; Shaker, Ahmed Journal: Superlattices and microstructures Issue: Volume 145(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance. (11th June 2021) Authors: Salah, Ahmed; Shaker, Ahmed; El-Banna, Mohamed; Ossaimee, Mahmoud Journal: Semiconductor science and technology Issue: Volume 36:Number 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗