Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application. (June 2020)

• Record Type: Journal Article
• Authors: Nabil, Amira; Bernardo, Jose A.; Ma, Yue; Abouelatta, Mohamed; Shaker, Ahmed; Bouchet, Latifa Fakri; Ragai, Hani; Gontrand, Christian
• Is Part Of: Microelectronics journal. Volume 100(2020)
• Publication Date: 2020-06
• Subjects: 3D integrated circuits -- Through silicon via (TSV) -- Compact modeling -- 2x TSVs chains -- RF filter; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2020.104797
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: In this paper, a simple closed-form model identifying the electrical behavior of a taper through silicon via (TSV) is reported. The model is based on the Transmission Line Method (TLM) and 3D electromagnetic simulations. The usefulness of the modeling approach is validated through measurements on some test structures over a wide range of frequencies from DC to 10 ​GHz. The substrate coupling and MOS effects are included in the electrical description of the 3D system as they are no longer negligible at high-frequency range operation. The efficient 3D-TLE (Transmission Line Extractor) by INL (Institute of Nanotechnology of Lyon) tool is used to extract the impedance of contacts and TSVs. Moreover, as an application of this extractor, a 26GHz/2 ​GHz bandwidth TSV based RF filter is proposed and designed.