Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering. (1st January 2018)

• Record Type: Journal Article
• Authors: Salem, Nada; Ossaimee, Mahmoud; Shaker, Ahmed; Abouelatta, Mohamed
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 3(2018)
• Page Start: M23
• Page End: M28
• Publication Date: 2018-01-01
• Subjects: CNTFET -- Gaussian doping -- Underlap; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0021803jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The major limitation of tunneling carbon nanotube field-effect transistors (T-CNTFET) is the ambipolar behavior. In this paper, we show that this problem could be solved by using a partially-gated channel, or Gaussian doping method. The effect of using the two mentioned methods on the electrical characteristics of T-CNTFET has been examined. The non-equilibrium Green's functions (NEGF) in conjunction with Poisson's equation are solved self-consistently. The cutoff frequency ( fT ) and power-delay product (PDP) as well as the intrinsic delay ( τ ) have been considered as key parameters for frequency performance and speed characteristics. The simulation results show an improvement in the OFF-state current and the high-frequency performance as well as a suppression of the ambipolar conduction. These advantages of the proposed techniques make T-CNTFET suitable for low-power and high-speed applications.