1. (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters. (20th July 2018) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Breuer, Uwe; Ikonic, Zoran; Hartmann, Jean-Michel; Schubert, Markus Andreas; Capellini, Giovanni; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 189 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices. (8th September 2020) Authors: Wolansky, Dirk; Blaschke, Jean-Paul; Drews, Jürgen; Grabolla, Thomas; Heinemann, Bernd; Lenke, Thomas; Rücker, Holger; Schubert, Markus Andreas; Schulze, Sebastian; Stoll, Heinz-Peter; Zöllner, Marvin; Richter, Uwe; Deyo, Dan Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Oxygen in Silicon: End of the Story?. (23rd July 2018) Authors: Kissinger, Gudrun; Kot, Dawid; Schubert, Markus Andreas; Dabrowski, Jaroslaw; Sattler, Andreas; Mueller, Timo Journal: ECS transactions Issue: Volume 86:Number 10(2018) Page Start: 61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer. (11th July 2017) Authors: Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Hesse, Anne; Murota, Junichi; Tillack, Bernd Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 8(2017) Page Start: P531 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer. (1st January 2017) Authors: Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Hesse, Anne; Murota, Junichi; Tillack, Bernd Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 8(2017) Page Start: P531 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Alignment control of self-ordered three dimensional SiGe nanodots. (19th October 2018) Authors: Yamamoto, Yuji; Itoh, Yuhki; Zaumseil, Peter; Schubert, Markus Andreas; Capellini, Giovanni; Montalenti, Francesco; Washio, Katsuyoshi; Tillack, Bernd Journal: Semiconductor science and technology Issue: Volume 33:Number 11(2018:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon. Issue 12 (17th November 2017) Authors: Kot, Dawid; Kissinger, Gudrun; Schubert, Markus Andreas; Marschmeyer, Steffen; Schwalb, Georg; Sattler, Andreas Journal: Physica status solidi Issue: Volume 14:Issue 12(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy. Issue 7 (29th June 2015) Authors: Kot, Dawid; Kissinger, Gudrun; Schubert, Markus Andreas; Klingsporn, Max; Huber, Andreas; Sattler, Andreas Journal: Physica status solidi Issue: Volume 9:Issue 7(2015:Jul.) Page Start: 405 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy. (1st November 2017) Authors: Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Capellini, Giovanni; Salvalaglio, Marco; Montalenti, F.; Schroeder, Thomas; Tillack, Bernd Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 30 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High Crystallinity Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition. (22nd February 2023) Authors: Yamamoto, Yuji; Wen, Wei-Chen; Schubert, Markus Andreas; Corley-Wiciak, Cedric; Tillack, Bernd Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 2(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗